Plenary speakers
| David Awschalom University of Chicago, USA |
Beyond electronics: abandoning perfection for quantum technologies |
| Didier Blavette University of Rouen, France |
Atomic-scale investigation of defects in semiconductors using atom probe tomography |
| Colin Humphreys University of Cambridge, UK |
Why are InGaN/GaN LEDs so bright when the dislocation density is so high? The importance of the atomic structure of the InGaN quantum wells |
| Chris Van de Walle University of California, Santa Barbara, USA |
Impact of defects on efficiency of solid-state light emitters |
Special plenary session on Coupling and Comparison of Computational and Experimental Approaches to Defects in Semiconductors speakers
| Matt McCluskey Washington State University, USA |
Defects in ZnO and SrTiO3 |
| Sokrates Pantelides Vanderbildt University, USA |
Connecting theory to experiments – Defects in semiconductor electronic devices |
| Alfredo Pasquarello Ecole Polytechnique Federale de Lausanne, Switzerland |
Accuracy of defect levels through advanced electronic-structure methods |
| Bengt Svensson University of Oslo, Norway |
Abundant point defects in Si, SiC and ZnO; comparison between experiment and theory |
Invited speakers in the parallel sessions
| Martin Albrecht Leibniz Institute of Crystal Growth, Germany |
Structural and optical properties of dislocations in III-nitrides |
| Audrius Alkauskas Center for Physical Sciences and Technology, Lithuania |
First principles theory of radiative and nonradiative carrier capture processes at point defects |
| Pavel Baranov Ioffe Institute, Russia |
Electron paramagnetic resonance of defects in wide-band gap semiconductors and related nanostructures |
| Jose Coutinho University of Aveiro, Portugal |
Nanodopants for solid arrays of semiconductor nanocrystals |
| Philip Dawson University of Manchester, UK |
Effects of carrier localisation in InGaN/GaN quantum well structures |
| Kai-Mei Fu University of Washington, USA |
Hybrid GaP-diamond photonic devices for scalable on-chip entanglement of defects in diamond |
| Adam Gali Wigner Center, Hungary |
Defects in diamond and silicon carbide for quantum computing and sensing |
| Junko Ishi-Hayase Keio University, Japan |
Control of position and orientation of nitrogen-vacancy centers in CVD-grown diamond thin film |
| Anderson Janotti University of California, Santa Barbara, USA |
The role of vacancies and polarons in SrTiO3 |
| Arkady Krasheninnikov Aalto University, Finland |
Defects in two-dimensional materials: their production under irradiation, evolution and properties |
| Norikazu Mizuochi Osaka University, Japan |
Control of qubits and orientation of NV center in diamond |
| Rachel Oliver University of Cambridge, UK |
Multi-microscopy analysis of defects in GaN-based microdisk lasers |
| Clas Persson University of Oslo, Norway |
Native defects in Cu(In,Ga)Se2 and Cu2ZnSn(S,Se)4 |
| Patrick Rinke Aalto University, Finland |
Space-charge transfer and charged defects at surfaces |
| David Scanlon University College London, UK |
Defect and band engineering in Sn-based oxides |
| Alex Shluger University College London, UK |
Identifying defects at interfaces for microelectronics |
| Wolfgang Skorupa Helmoltz Zentrum Dresden-Rossendorf, Germany |
Subsecond thermal processing for nanostructured semiconductors |
| Nguyen T. Son Linköping University, Sweden |
Identification of shallow donor in natural MoS2 |
| Andre Stesmans KU Leuven, Belgium |
Intrinsic point defects at high-mobility semiconductor/insulator interfaces probed by ESR: Ge and GaAs |
| Timothy Veal University of Liverpool, UK |
Optical properties and defects in GaSbBi and GaNSb alloys |
| Kazumi Wada University of Tokyo, Japan |
Recent progress in Si microphotonics – defects and photonic device performances |
| Kin Man Yu City University of Hong Kong, China |
Defects and properties of cadmium oxide based transparent conductors for full spectrum photovoltaics |
| Andriy Zakutayev National Renewable Energy Laboratory, USA |
Defects in “earth abundant” semiconductors for PV: experiment and theory |
| Shengbai Zhang Rensselaer Polytechnic Institute, USA |
Coupling molecular dynamics with time-dependent density functional theory to probe excited carrier dynamics |